Department of Electrical, Electronic, and Communication Engineering,
Faculty of Science and Engineering, Chuo University
Graduate School of Science and Engineering, Chuo University

TOPICS
2017 2016 2015 2014 2013 2012 2011 2010 2009
2008
2017
Aug28,17 Publications:
  • Chihiro Matsui and Ken Takeuchi
    “Error-Correction & Set/Reset Verify Strategy of Storage Class Memory (SCM) for SCM/NAND Flash Hybrid and All-SCM Storage”
    International Conference on Solid State Devices and Materials (SSDM)
  • Yukiya Sakaki, Tomoaki Yamada, Chihiro Matsui, Yusuke Yamaga and Ken Takeuchi
    “23% Higher Performance 2D MLC/3D TLC NAND Flash Hybrid Solid-State Drive”
    International Conference on Solid State Devices and Materials (SSDM)
  • Jul17,17 Publications:
  • Chihiro Matsui and Ken Takeuchi
    “22% Higher Performance, 2x SCM Write Endurance Heterogeneous Storage with Dual Storage Class Memory and NAND Flash”
    European Solid-Sotate Devices Research Conference (ESSDERC)
  • Takashi Inose1, Seiichi Aritome1, Ryutaro Yasuhara2, Satoshi Mishima2 and Ken Takeuchi1, 1Chuo University, Tokyo, Japan, 2Panasonic Semiconductor Solutions Co.,Ltd
    “Study of Error Repeatability and Recovery in 40nm TaOx ReRAM”
    European Solid-Sotate Devices Research Conference (ESSDERC)
  • Chihiro Matsui, Tomoaki Yamada, Yusuke Sugiyama, Yusuke Yamaga and Ken Takeuchi
    “Tri-Hybrid SSD with SCM and MLC/TLC NAND Flash Memories”
    Flash Memory Summit
  • May30,17 Publications:
  • Yoshiaki Deguchi, Atsuro Kobayashi, Hikaru Watanabe and Ken Takeuchi
    “Flash Reliability Boost Huffman Coding (FRBH): Co-Optimization of Data Compression and VTH Distribution Modulation to Enhance Data-Retention Time by Over 2900x”
    IEEE Symposium on VLSI Technologies
  • Apr28,17 Publications:
  • Atsuna Hayakawa1, Kazuki Maeda1, Shouhei Fukuyama1, Hirofumi Takishita1, Ryutaro Yasuhara2, Satoshi Mishima2 and Ken Takeuchi1, 1Chuo University, Tokyo, Japan, 2Panasonic Semiconductor Solutions Co.,Ltd
    “Resolving Endurance and Program Time Trade-off of 40nm TaOx-based ReRAM by Co-optimizing Verify Cycles, Reset Voltage and ECC Strength”
    IEEE International Memory Workshop (IMW)
  • Toshiki Nakamura, Yoshiaki Deguchi and Ken Takeuchi
    “AEP-LDPC ECC with Error Dispersion Coding for Burst Error Reduction of 2D and 3D NAND Flash Memories”
    IEEE International Memory Workshop (IMW)
  • Yusuke Sugiyama, Tomoaki Yamada, Chihiro Matsui and Ken Takeuchi
    “Reconfigurable SCM capacity Identification Method for SCM/NAND Flash Hybrid Disaggregated Storage”
    IEEE International Memory Workshop (IMW)
  • Kyoji Mizoguchi, Tomonori Takahashi, Seiichi Aritome and Ken Takeuchi
    “Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories”
    IEEE International Memory Workshop (IMW)
  • Yoshiaki Deguchi, Toshiki Nakamura, Atsuro Kobayashi and Ken Takeuchi
    “12x Bit-Error Acceptable, 300x Extended Data-Retention Time, Value-Aware SSD with Vertical 3D-TLC NAND Flash Memories for Image Recognition”
    IEEE Custom Integrated Circuits Conference (CICC)
  • Apr12,17 Publications:
  • Tomoaki Yamada, Atsuya Suzuki, Yusuke Sugiyama, Chihiro Matsui and Ken Takeuchi
    “Comprehensive Analysis on SCM Specifications for High-Performance SCM/NAND Flash Hybrid SSD with Through-Silicon Via”
    IEEE International Conference on Electronics Packaging (ICEP)
  • Apr1,17 Publications:
  • Yusuke Yamaga, Chihiro Matsui, Yukiya Sakaki, Atsuro Kobayashi and Ken Takeuchi
    “Real Usage-based Precise Reliability Test by Extracting Read/Write/Retention-Mixed Real-life Access of NAND Flash Memory from System-level SSD Emulator”
    IEEE International Reliability Physics Symposium (IRPS)
  • Seiichi Aritome, Tomonori Takahashi, Kyoji Mizoguchi and Ken Takeuchi
    &RTN Impact on Data-Retention Failure/Recovery in Scaled (~1Ynm) TLC NAND Flash Memories”
    IEEE International Reliability Physics Symposium (IRPS)
  • Kazuki Maeda1, Shouhei Fukuyama1, Ryutaro Yasuhara2, Satoshi Mishima2 and Ken Takeuchi1 1Chuo University, Tokyo, Japan, 2Panasonic Semiconductor Solutions Co.,Ltd
    &Error Recovery of Low Resistance State in 40nm TaOx-based ReRAM”
    IEEE International Reliability Physics Symposium (IRPS)
  • Atsuro Kobayashi, Hikaru Watanabe, Yukiya Sakaki, Seiichi Aritome and Ken Takeuchi
    &Investigation of Read Disturb Error in 1Ynm NAND Flash Memories for System Level Solution”
    IEEE International Reliability Physics Symposium (IRPS)
  • Apr1,17 Member list renewal

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